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PD - 95556
IRG4PC30FDPBF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 IGBT co-packaged with HEXFRED TM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-247AC package Lead-Free
Fast CoPack IGBT
C
VCES = 600V
G E
VCE(on) typ. = 1.59V
@VGE = 15V, IC = 17A
n-channel
Benefits
Generation -4 IGBT's offer highest efficiencies available IGBT's optimized for specific application conditions HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's
TO-247AC
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw.
Max.
600 31 17 120 120 12 120 20 100 42 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbfin (1.1 Nm)
Units
V
A
V W C
Thermal Resistance
Parameter
RJC RJC RCS RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight
Typ.
0.24 6 (0.21)
Max.
1.2 2.5 40
Units
C/W g (oz)
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1
7/26/04
IRG4PC30FDPBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)CES
V(BR)CES/TJ
VCE(on)
VGE(th) VGE(th)/TJ gfe ICES VFM IGES
Parameter Min. Collector-to-Emitter Breakdown Voltage 600 Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage Gate Threshold Voltage 3.0 Temperature Coeff. of Threshold Voltage Forward Transconductance 6.1 Zero Gate Voltage Collector Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current
Typ. Max. Units V 0.69 V/C 1.59 1.8 1.99 V 1.70 6.0 -11 mV/C 10 S 250 A 2500 1.4 1.7 V 1.3 1.6 100 nA
Conditions VGE = 0V, IC = 250A VGE = 0V, IC = 1.0mA IC = 17A VGE = 15V IC = 31A See Fig. 2, 5 IC = 17A, TJ = 150C VCE = VGE, IC = 250A VCE = VGE, IC = 250A VCE = 100V, IC = 17A VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 150C IC = 12A See Fig. 13 IC = 12A, TJ = 150C VGE = 20V
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Qg Qge Qgc t d(on) tr t d(off) tf Eon Eoff Ets td(on) tr t d(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. Typ. 51 7.9 19 42 26 230 160 0.63 1.39 2.02 42 27 310 310 3.2 13 1100 74 14 42 80 3.5 5.6 80 220 180 120 Max. Units Conditions 77 IC = 17A 12 nC VCC = 400V See Fig. 8 28 VGE = 15V TJ = 25C ns IC = 17A, VCC = 480V 350 VGE = 15V, RG = 23 230 Energy losses include "tail" and diode reverse recovery. mJ See Fig. 9, 10, 11, 18 3.9 TJ = 150C, See Fig. 9, 10, 11, 18 ns IC = 17A, VCC = 480V VGE = 15V, RG = 23 Energy losses include "tail" and mJ diode reverse recovery. nH Measured 5mm from package VGE = 0V pF VCC = 30V See Fig. 7 = 1.0MHz 60 TJ = 25C See Fig. ns 120 TJ = 125C 14 IF = 12A 6.0 A TJ = 25C See Fig. 10 TJ = 125C 15 VR = 200V 180 TJ = 25C See Fig. nC 600 TJ = 125C 16 di/dt 200A/s TJ = 25C See Fig. A/s TJ = 125C 17
2
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IRG4PC30FDPBF
25
20
Load Current ( A )
Duty cycle: 50% T J = 125C T sink = 90C Gate drive as specified Turn-on losses include effects of reverse recovery
Power Dissipation = 24W
15 60% of rated voltage 10
5
0 0.1 1 10
A
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
1000
IC , Collector-to-Emitter Current (A)
100
TJ = 25C
IC , Collector-to-Emitter Current (A)
100
TJ = 150C
TJ = 150C TJ = 25C
10
10
1 1
V GE = 15V 20s PULSE WIDTH A
10
1 5 6 7 8 9
V CC = 50V 5s PULSE WIDTH A
10 11 12 13
VCE , Collector-to-Emitter Voltage (V)
VGE, Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics www.irf.com
Fig. 3 - Typical Transfer Characteristics 3
IRG4PC30FDPBF
40
VGE = 15V
2.5
VCE , Collector-to-Emitter Voltage (V)
VGE = 15V 80s PULSE WIDTH I C = 34A
Maximum DC Collector Current (A)
30
2.0
20
I C = 17A
1.5
10
I C = 8.5A
A
-60 -40 -20 0 20 40 60 80 100 120 140 160
0 25 50 75 100 125 150
1.0
TC , Case Temperature (C)
TJ , Junction Temperature (C)
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature
10
Thermal Response (Z thJC )
1
D = 0.50 0.20 0.10
P DM
0.1
0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE)
t
1 t2
Notes: 1. Duty factor D = t
1
/t
2
0.01 0.00001
2. Peak TJ = PDM x Z thJC + T C
0.0001
0.001
0.01
0.1
1
10
t 1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com
IRG4PC30FDPBF
2000 VGE = 0V f = 1 MHz SHORTED 20
1600
Coes = Cce + Cgc
VGE , Gate-to-Emitter Voltage (V)
A
Cies = Cge + Cgc + Cce Cres = Cce
VCE = 400V IC = 17A
16
C, Capacitance (pF)
1200
Cies
12
800
8
Coes
400
Cres
1 10 100
4
0
0 0 10 20 30 40 50
A
60
VCE, Collector-to-Emitter Voltage (V)
Qg , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
2.20
Total Switchig Losses (mJ)
2.10
Total Switchig Losses (mJ)
VCC VGE TJ IC
= 480V = 15V = 25C = 17A
10
IC = 34A
I C = 17A
1
2.00
IC = 8.5A
1.90
1.80 0 20 40 60
A
80
0.1
R G = 23 V GE = 15V V CC = 480V
-60 -40 -20 0 20 40 60 80
A 100 120 140 160
R G, Gate Resistance ( )
TJ , Junction Temperature (C)
Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com
Fig. 10 - Typical Switching Losses vs. Junction Temperature 5
IRG4PC30FDPBF
8.0 6.0
I C , Collector-to-Emitter Current (A)
Total Switchig Losses (mJ)
RG TJ VCC VGE
= 23 = 150C = 480V = 15V
1000
VGE = 20V GE TJ = 125C
100
SAFE OPERATING AREA
4.0
10
2.0
0.0 0 10 20 30
A 40
1 1 10 100 1000
IC , Collector-to-Emitter Current (A)
VCE , Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
100
Fig. 12 - Turn-Off SOA
Instantaneous Forward Current - I F (A)
TJ = 150C
10
TJ = 125C TJ = 25C
1 0.4
0.8
1.2
1.6
2.0
2.4
Forward Voltage Drop - V FM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com
IRG4PC30FDPBF
160 100
VR = 200V TJ = 125C TJ = 25C
120
VR = 200V TJ = 125C TJ = 25C
I F = 24A I F = 12A
80
I IRRM - (A)
I F = 24A
10
t rr - (ns)
I F = 12A IF = 6.0A
I F = 6.0A
40
0 100
di f /dt - (A/s)
1000
1 100
di f /dt - (A/s)
1000
Fig. 14 - Typical Reverse Recovery vs. dif/dt
600
Fig. 15 - Typical Recovery Current vs. dif/dt
10000
VR = 200V TJ = 125C TJ = 25C
VR = 200V TJ = 125C TJ = 25C
400
di(rec)M/dt - (A/s)
1000
Q RR - (nC)
IF = 6.0A
I F = 24A
200
I F = 12A
I F = 12A
100
IF = 6.0A
IF = 24A
0 100
di f /dt - (A/s)
1000
10 100
di f /dt - (A/s)
1000
Fig. 16 - Typical Stored Charge vs. dif/dt www.irf.com
Fig. 17 - Typical di(rec)M/dt vs. dif/dt 7
IRG4PC30FDPBF
90% Vge +Vge
Same type device as D.U.T.
Vce
Ic
10% Vce
90% Ic Ic 5% Ic
80% of Vce
430F D.U.T.
td(off) tf
Eoff =
t1+5S Vce ic dt
t1
Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1 t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
GATE VOLTAGE D.U.T. 10% +Vg +Vg
Ic
trr
Qrr =
trr id dt tx
tx 10% Vcc Vce Vcc 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk
10% Irr Vcc
Vpk
Irr
Ic DIODE RECOVERY WAVEFORMS
td(on)
tr
5% Vce t2 Eon = Vce ie dt t1 t2 DIODE REVERSE RECOVERY ENERGY t3
t4 Erec = Vd id dt t3
t1
t4
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
8
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IRG4PC30FDPBF
Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0
t1
t2
Figure 18e.
18 '
L 1000V 50V 6000F 100V Vc*
D.U.T.
RL= 0 - 480V
480V 4 X IC @25C
Figure 19.
Figure 20.
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9
IRG4PC30FDPBF
Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) VCC=80%(VCES), VGE=20V, L=10H, RG = 23 (figure 19) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot.
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
EXAMPLE: T HIS IS AN IRFPE30 WIT H ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN THE AS SEMBLY LINE "H"
Note: "P" in assembly line position indicates "Lead-Free"
INT ERNATIONAL RECT IFIER LOGO ASSEMBLY LOT CODE
PART NUMBER
IRFPE30
56 035H 57
DAT E CODE YEAR 0 = 2000 WEEK 35 LINE H
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 07/04
10
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/

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